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T-13/4 670 nm High Radiant Intensity Emitter Technical Data
HEMT-3300
Features
* * * * * * High Efficiency Nonsaturating Output Narrow Beam Angle Visible Flux Aids Alignment Bandwidth: DC to 3 MHz IC Compatible/Low Current Requirement
Description
The HEMT-3300 is a visible, near-IR, source using a GaAsP on GaP LED chip optimized for maximum quantum efficiency at 670 nm. The emitter's beam is sufficiently narrow to minimize stray flux problems, yet broad enough to simplify optical
alignment. This product is suitable for use in consumer and industrial applications such as optical transducers and encoders, smoke detectors, assembly line monitors, small parts counters, paper tape readers, and fiber optic drivers.
Package Dimensions
UNDIFFUSED, UNTINTED (CLEAR) PLASTIC 5.08 (0.200) 4.32 (0.170)
9.47 (0.373) 7.95 (0.313)
0.89 (0.035) 0.64 (0.025) 26.67 (1.05) MIN. 25.40 (1.00) MIN. NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETERS (INCHES). 2. LEADS ARE MILD STEEL, SOLDER DIPPED. 3. AN EPOXY MENISCUS MAY EXTEND ABOUT 1 mm (0.040 in) DOWN THE LEADS.
0.64 (0.025) 0.36 (0.014)
0.41 (0.016) 0.36 (0.014) 6.10 (0.240) 5.59 (0.220) CATHODE 2.54 (0.10) NOM.
2
Absolute Maximum Ratings at TA = 25C
Power Dissipation .................................................................... 120 mW (derate linearly from 50C at 1.6 mW/C) Average Forward Current ............................................................ 30 mA (derate linearly from 50C at 0.4 mA/ C) Peak Forward Current ....................................................... See Figure 5 Operating and Storage Temperature Range ................ -55C to +100C Lead Soldering Temperature .................................. 260C for 5 seconds (1.6 mm [0.063 in.] from body)
Electrical/Optical Characteristics at TA = 25C
Symbol Ie Ke v 21/2 PEAK PEAK/T tr tf CO BVR VF VF /T RJ-PIN Description Axial Radiant Intensity Temperature Coefficient of Intensity Luminous Efficacy Half Intensity Total Angle Peak Wavelength Spectral Shift Temperature Coefficient Output Rise Time (10% to 90%) Output Fall Time (90% to 10%) Capacitance Reverse Breakdown Voltage Forward Voltage Temperature Coefficient of VF Thermal Resistance Min. 200 Typ. Max. 500 -0.009 22 22 670 0.089 120 50 15 5.0 1.9 -2.2 260 2.5 Units W/sr C-1 lm/W deg. nm nm/C ns ns pF V V mV/C C/W Test Conditions IF = 10 mA IF = 10 mA, Note 1 Note 2 Note 3, IF = 10 mA Measured at Peak Measured at Peak, Note 4 IPEAK = 10 mA IPEAK = 10 mA VF = 0; f = 1 MHz IR = 100 A IF = 10 mA IF = 100 A LED Junction to Cathode Lead. 2 Fig. 3, 4
6 1
Notes: 1. Ie (T) = I e (25C)exp [Ke(T - 25C)]. 2. IV = vI e where Iv is in candela, Ie in watts/steradian and v in lumen/watt. 3. 1/2 is the off-axis angle at which the radiant intensity is half the axial intensity. 4. PEAK (T) = PEAK (25C) + (PEAK/T) (T - 25C).
3
1.2 1.0 0.8 0.6 0.4 0.2 TA = 100 C 0 600 620 640 660 680 700 720 740 760 - WAVELENGTH - nm TA = 25 C
60
IF - FORWARD CURRENT - mA
RELATIVE INTENSITY
50 40 30 20 10 0 1.6
TA = 25 C
1.8
2.0
2.2
2.4
2.6
2.8
VF - FORWARD VOLTAGE - V
Figure 1. Relative Intensity vs. Wavelength.
Figure 2. Forward Current vs. Forward Voltage.
10
RELATIVE RADIANT INTENSITY (NORMALIZED AT 10 mA)
TA = 25 C
RELATIVE EFFICIENCY (NORMALIZED AT 10 mA DC)
PULSED 10 s 100 Hz DC
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 .1 .2 .3 .5 1 2 3 45 10 20 30 50 100 TA = 25 C
1
0.1
0.01 .3 .5
1
2 3 45
10 20 30 50 80
IF - FORWARD CURRENT - mA
IPEAK - PEAK CURRENT - mA
Figure 3. Relative Radiant Intensity vs. Forward Current.
Figure 4. Relative Efficiency (Radiant Intensity per Unit Current) vs. Peak Current.
e () NORMALIZED FLUX-TO-INTENSITY RATIO WITHIN A GIVEN CONE ANGLE Ie (0)
IPEAK MAX. RATIO OF MAX. PEAK CURRENT TO MAX. DC CURRENT IDC MAX.
4
20 30 40 50
10
1.0
0.25
3
0.8 TA = 25 C 0.6
0.20
0.15
2
300 KH z
60
100 K Hz 30 KH z 10 KH z
3 KH z
z 1 KH
300 H z
100 Hz
70 80
0.4
0.10
0.2
0.05 0.00 45
1 1
10
100
1000
10,000
90
0
5
10
15
20
25 30
35
40
tp - PULSE DURATION - s
- OFF-AXIS ANGLE - DEGREES (CONE HALF-ANGLE)
Figure 5. Maximum Tolerable Peak Current vs. Pulse Duration. (I DC MAX as per MAX Ratings)
Figure 6. Far-Field Radiation Pattern.
www.semiconductor.agilent.com Data subject to change. Copyright (c) 1999 Agilent Technologies, Inc. Obsoletes 5952-8498 (8/76) 5964-6427E (11/99)

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